Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector

被引：144
|
作者：
Kim, S [1 ]
Mohseni, H [1 ]
Erdtmann, M [1 ]
Michel, E [1 ]
Jelen, C [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 07期
关键词：
D O I：
10.1063/1.122053
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum growth conditions were studied to obtain uniform InGaAs quantum dots constructed in an InGaP matrix. Normal incidence photoconductivity was observed at a peak wavelength of 5.5 mu m with a high responsivity of 130 mA/W and a detectivity of 4.74x 10(7) cm H-1/2/W at 77 K. (C) 1998 American Institute of Physics.
引用
收藏
页码：963 / 965
页数：3
相关论文
共 50 条
  • [41] MOCVD Growth and Characterization of InN Quantum Dots
    Reilly, Caroline E.
    Nakamura, Shuji
    DenBaars, Steven P.
    Keller, Stacia
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (04):
  • [42] Growth and characterization of HgSe:Fe quantum dots
    Tran-Anh, T
    Hansel, S
    Kirste, A
    Müller, HU
    von Ortenberg, M
    Barner, J
    Rabe, JP
    JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) : 198 - 201
  • [43] Growth and optical characterization of InAsN quantum dots
    Tsurusawa, H.
    Nishikawa, A.
    Katayama, R.
    Onabe, K.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1657 - 1660
  • [44] Growth and characterization of HgSe:Fe quantum dots
    Hansel, S. (hansel@physik.hu-berlin.de), 1600, Elsevier Ltd (371): : 1 - 2
  • [45] Growth and characterization of CdSe:Mn quantum dots
    Tang, X
    Urbaszek, B
    Graham, TCM
    Warburton, RJ
    Prior, KA
    Cavenett, BC
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 586 - 590
  • [46] Growth and Characterization of InAs Quantum Dots on GaAsSb
    Liu, Guangyan
    Wang, Wencai
    FRONTIERS OF MECHANICAL ENGINEERING AND MATERIALS ENGINEERING, PTS 1 AND 2, 2012, 184-185 : 1001 - +
  • [47] HgSe:Fe quantum dots:: growth and characterization
    Tran-Anh, T
    Hansel, S
    Kirste, A
    Mueller, HU
    von Ortenberg, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 20 (3-4): : 444 - 448
  • [48] Growth and characterization of InAs quantum dots on silicon
    Hansen, L
    Ankudinov, A
    Bensing, F
    Wagner, J
    Ade, G
    Hinze, P
    Wagner, V
    Geurts, J
    Waag, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 515 - 519
  • [49] An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques
    Sharma, T. K.
    Hosea, T. J. C.
    Sweeney, S. J.
    Tang, X.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (08)
  • [50] MOVPE synthesis of InGaP quantum dots on GaP and their characterisation
    Arora, BM
    Datta, S
    Bhattacharya, A
    Gokhale, MR
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 262 - 264
12345