A low-voltage process corner insensitive subthreshold CMOS voltage reference circuit

被引:0
|
作者
Lin, Hongchin [1 ]
Chang, Dern-Koan [1 ]
机构
[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18 mu m CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6 mu A. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm(2) achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20 degrees C to 120 degrees C.
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页码:227 / +
页数:2
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