A low-voltage process corner insensitive subthreshold CMOS voltage reference circuit

被引：0
|
作者：
Lin, Hongchin [1 ]
Chang, Dern-Koan [1 ]
机构：
[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan
来源：
2006 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A reference voltage circuit is presented for generating a constant reference voltage of 278mV using subthreshold characteristics of 0.18 mu m CMOS technology at supply voltages from 0.8V to 2.6V with total current of 3.6 mu A. The threshold voltage variation due to process corner variation is minimized by a threshold voltage tracking technique between the normal and high threshold NMOS transistors. In the mean time, channel-length modulation effect is also compensated. The proposed circuit on chip area of 0.04mm(2) achieves the total reference voltage variation of 2.5mV for various process corners and temperature variation from -20 degrees C to 120 degrees C.
引用
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页码：227 / +
页数：2
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