Flash memory cells data loss caused by total ionizing dose and heavy ions

被引：19
|
作者：
Petrov, Andrey [1 ]
Vasil'ev, Alexey [1 ]
Ulanova, Anastasia [1 ]
Chumakov, Alexander [1 ]
Nikiforov, Alexander [1 ]
机构：
[1] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia
来源：
CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2014年 / 12卷 / 10期
关键词：
flash memory; single event upsets; total dose;
D O I：
10.2478/s11534-014-0503-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper provides experimental results of flash memory loss data investigation. Possible mechanisms of charge loss from storage element are reviewed. We provide some guidelines for flash memory evaluation to space application.
引用
收藏
页码：725 / 729
页数：5
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