The I-V characteristics of a graphene tunnel diode

被引：6

作者：

Jimenez, Miguel Saldana ^{[1
]}

Dartora, C. A. ^{[1
]}

机构：

[1] Fed Univ Parana UFPR, CP 19011, BR-81531970 Curitiba, PR, Brazil

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2014年 / 59卷

关键词：

Graphene; Tunnel diode; Dirac fermion; DIRAC FERMIONS; PHASE;

D O I：

10.1016/j.physe.2013.12.014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Graphene is a 2D carbon allotrope in which electrons behave as massless Dirac fermions in a (1+2)-D relativistic space-time near the so-called Dirac points of the Brillouin zone of a honeycomb lattice, rendering very unusual electronic properties. Here, the physics of a graphene tunnel diode is explored. The p-n configuration can be achieved by means of graphene doping. The transfer Hamiltonian method, incorporating the main features of relativistic tunneling of Dirac massless fermions in graphene permits the prediction of the I-V characteristics for graphene tunnel junctions in distinct configurations, and, in particular, the graphene diode. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：1 / 5

页数：5

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