Optical and electrical characterization of a back-thinned CMOS active pixel sensor

被引：3

作者：

Blue, Andrew ^{[1
]}

Clark, A.

Houston, S. ^{[1
]}

Laing, A. ^{[1
]}

Maneuski, D. ^{[1
]}

Prydderch, M.

Turchetta, R.

O'Shea, V. ^{[1
]}

机构：

[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 604卷 / 1-2期

关键词：

APS; PTC; Imaging detectors; CMOS; IMAGE SENSORS; DETECTORS; CCD;

D O I：

10.1016/j.nima.2009.01.088

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This work will report on the first work on the characterization of a back-thinned Vanilla-a 512 x 512 (25 mu m squared) active pixel sensor (APS). Characterization of the detectors was carried out through the analysis of photon transfer curves to yield a measurement of full well capacity, noise levels, gain constants and linearity. Spectral characterization of the sensors was also performed in the visible and UV regions. A full comparison against non-back-thinned front illuminated Vanilla sensors is included. Such measurements suggest that the Vanilla APS will be suitable for a wide range of applications, including particle physics and biomedical imaging. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：215 / 217

页数：3

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