Back-thinned CMOS Sensor Optimisation

被引:15
|
作者
Jerram, Paul [1 ]
Burt, David [1 ]
Guyatt, Neil [1 ]
Hibon, Vincent [2 ]
Vaillant, Joel [2 ]
Henrion, Yann [2 ]
机构
[1] E2V Technol, Waterhouse Lane, Chelmsford CM1 2QU, Essex, England
[2] E2V Semicond SAS, Saint Egreve, France
来源
关键词
D O I
10.1117/12.852389
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Back-thinning of a CCD image sensor is a very well established process for achieving high quantum efficiency and the majority of high-specification space and science applications have used such back-thinned devices for many years. CMOS sensors offer advantages over CCDs for a number of these applications and, in principle, it should be possible to back-thin CMOS devices and obtain the same performance as the CCD. This has now been demonstrated by e2v and results from two recent programmes to back-thin CMOS sensors show excellent quantum efficiency values.
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页数:12
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