Optical and electrical characterization of a back-thinned CMOS active pixel sensor

被引：3
|
作者：
Blue, Andrew [1 ]
Clark, A.
Houston, S. [1 ]
Laing, A. [1 ]
Maneuski, D. [1 ]
Prydderch, M.
Turchetta, R.
O'Shea, V. [1 ]
机构：
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 604卷 / 1-2期
关键词：
APS; PTC; Imaging detectors; CMOS; IMAGE SENSORS; DETECTORS; CCD;
D O I：
10.1016/j.nima.2009.01.088
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This work will report on the first work on the characterization of a back-thinned Vanilla-a 512 x 512 (25 mu m squared) active pixel sensor (APS). Characterization of the detectors was carried out through the analysis of photon transfer curves to yield a measurement of full well capacity, noise levels, gain constants and linearity. Spectral characterization of the sensors was also performed in the visible and UV regions. A full comparison against non-back-thinned front illuminated Vanilla sensors is included. Such measurements suggest that the Vanilla APS will be suitable for a wide range of applications, including particle physics and biomedical imaging. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：215 / 217
页数：3
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