An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V

被引：9

作者：

Muralidhar, R ^{[1
]}

Steimle, RF ^{[1
]}

Sadd, M ^{[1
]}

Rao, R ^{[1
]}

Swift, CT ^{[1
]}

Prinz, EJ ^{[1
]}

Yater, J ^{[1
]}

Grieve, L ^{[1
]}

Harber, K ^{[1
]}

Hradsky, B ^{[1
]}

Straub, S ^{[1
]}

Acred, B ^{[1
]}

Paulson, W ^{[1
]}

Chen, W ^{[1
]}

Parker, L ^{[1
]}

Anderson, SGH ^{[1
]}

Rossow, M ^{[1
]}

Merchant, T ^{[1
]}

Paransky, M ^{[1
]}

Huynh, T ^{[1
]}

Hadad, D ^{[1
]}

Chang, KM ^{[1
]}

White, BE ^{[1
]}

机构：

[1] Freescale Semicond, Technol Solut Org, Austin, TX 78721 USA

来源：

2004 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY | 2004年

关键词：

D O I：

10.1109/ICICDT.2004.1309900

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：31 / 35

页数：5

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