Study of the Scandate Cathode Properties from I-V Characteristics

被引：0
|
作者：
Shao, WenSheng [1 ]
Zhang, Ke [1 ]
Gao, YuJuan [1 ]
机构：
[1] Beijing Vacuum Elect Res Inst, Beijing 100015, Peoples R China
来源：
2014 TENTH INTERNATIONAL VACUUM ELECTRON SOURCES CONFERENCE (IVESC) | 2014年
关键词：
DIODES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Scandate cathode is the most promising cathode type which can be utilized in THz devices. There is a wide transition region in the I-V characteristics of scandate cathode. The low slope and dual slope in the I-V characteristics according with Child-Langmuir law will be discussed in this paper.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] I-V CHARACTERISTICS OF PALLADIUM AND VANADIUM FILMS.
    Kreynina, G.S.
    Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1972, 17 (06): : 985 - 987
  • [32] Study on the I-V characteristics of ferroelectric thin film systems with the structure of MFSM
    Yu, J
    Dong, XM
    Zhou, WL
    Wang, YB
    Zheng, YK
    Wang, H
    Liu, G
    Xie, JF
    Gao, JX
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 76 (01): : 22 - 25
  • [33] Study of the effect of intrinsic and induced defects on the I-V characteristics of YBCO films
    Camerlingo, C
    Nappi, C
    Russo, M
    Testa, G
    Mezzetti, E
    Gerbaldo, R
    Ghigo, G
    Gozzelino, L
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2000, 332 (1-4): : 93 - 98
  • [34] I-V characteristics of a ferroelectric field effect transistor
    MacLeod, TC
    Ho, FD
    INTEGRATED FERROELECTRICS, 2001, 34 (1-4) : 1461 - 1466
  • [35] New analytical HFET I-V characteristics model
    Sasic, RM
    Lukic, PM
    Ramovic, RM
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2006, 8 (01): : 324 - 328
  • [36] Modeling thermal effects on MESFET I-V characteristics
    Castagnolo, B
    Giorgio, A
    Perri, AG
    MELECON '96 - 8TH MEDITERRANEAN ELECTROTECHNICAL CONFERENCE, PROCEEDINGS, VOLS I-III: INDUSTRIAL APPLICATIONS IN POWER SYSTEMS, COMPUTER SCIENCE AND TELECOMMUNICATIONS, 1996, : 1298 - 1301
  • [37] TRAPEZOIDAL I-V CHARACTERISTICS IN GAAS TUNNEL DIODES
    AGUSTA, B
    NANAVATI, RP
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10): : 1498 - &
  • [38] Generalized approach to the parameter extraction from I-V characteristics of Schottky diodes
    Osvald, J
    Dobrocka, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (08) : 1198 - 1202
  • [39] Theory of I-V characteristics of magnetic Josephson junctions
    Yang, Shengyuan A.
    Niu, Qian
    Pesin, D. A.
    MacDonald, A. H.
    PHYSICAL REVIEW B, 2010, 82 (18):
  • [40] Method for measuring I-V characteristics of solar cells
    Liu Min
    Sun Huicong
    Mei Gaofeng
    Zhang Yu
    PROCEEDINGS OF 2019 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS (ICEMI), 2019, : 966 - 972
12345