Study of the Scandate Cathode Properties from I-V Characteristics

被引:0
|
作者
Shao, WenSheng [1 ]
Zhang, Ke [1 ]
Gao, YuJuan [1 ]
机构
[1] Beijing Vacuum Elect Res Inst, Beijing 100015, Peoples R China
关键词
DIODES;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Scandate cathode is the most promising cathode type which can be utilized in THz devices. There is a wide transition region in the I-V characteristics of scandate cathode. The low slope and dual slope in the I-V characteristics according with Child-Langmuir law will be discussed in this paper.
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页数:2
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