Design of 3.1-10.6GHz CMOS LNA Based on input matching technique of common-gate topology

被引：0

作者：

Chang, Yi-Cheng ^{[1
]}

Hsu, Meng-Ting ^{[1
]}

Hsieh, Yu-Chang ^{[1
]}

机构：

[1] Natl Yunlin Univ Sci & Technol, Dept & Inst Elect Engn, Touliu 64002, Yunlin, Taiwan

来源：

APPLIED SCIENCE AND PRECISION ENGINEERING INNOVATION, PTS 1 AND 2 | 2014年 / 479-480卷

关键词：

Low-noise Amplifier; Ultra-Wide-Band; low power;

D O I：

10.4028/www.scientific.net/AMM.479-480.1014

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18 mu m TSMC CMOS technique. The LNA input and output return loss are both less than -10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about -9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

引用

页码：1014 / 1017

页数：4

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