Design of 3.1-10.6GHz CMOS LNA Based on input matching technique of common-gate topology

被引：0
|
作者：
Chang, Yi-Cheng [1 ]
Hsu, Meng-Ting [1 ]
Hsieh, Yu-Chang [1 ]
机构：
[1] Natl Yunlin Univ Sci & Technol, Dept & Inst Elect Engn, Touliu 64002, Yunlin, Taiwan
来源：
APPLIED SCIENCE AND PRECISION ENGINEERING INNOVATION, PTS 1 AND 2 | 2014年 / 479-480卷
关键词：
Low-noise Amplifier; Ultra-Wide-Band; low power;
D O I：
10.4028/www.scientific.net/AMM.479-480.1014
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18 mu m TSMC CMOS technique. The LNA input and output return loss are both less than -10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about -9.5dBm. It consumes 11mW from a 1.0-V supply voltage.
引用
收藏
页码：1014 / 1017
页数：4
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