Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors

被引：7
|
作者：
Kim, Jin Soak [1 ]
Kim, Eun Kyu
Choi, Won Jun
Song, Jin Dong
Lee, Jung Il
机构：
[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Korea Inst Sci & Technol, Nanodevice Res Ctr, Seoul 130650, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6B期
关键词：
deep level transient spectroscopy; quantum dot; infrared photodetector; energy level; InAs/GaAs;
D O I：
10.1143/JJAP.45.5575
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance-voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60eV, which may be considered as an EL2 family in a GaAs material.
引用
收藏
页码：5575 / 5577
页数：3
相关论文
共 50 条
  • [21] Quantum-dot infrared photodetectors
    Campbell, Joe C.
    Madhukar, Anupam
    PROCEEDINGS OF THE IEEE, 2007, 95 (09) : 1815 - 1827
  • [22] Highly unidirectional InAs/InGaAs/GaAs quantum-dot ring lasers
    Cao, HJ
    Deng, H
    Ling, H
    Liu, CY
    Smagley, VA
    Caldwell, RB
    Smolyakov, GA
    Gray, AL
    Lester, LF
    Eliseev, PG
    Osinski, M
    APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
  • [23] Comparative study of the optical characteristics in InAs/GaAs quantum-dot infrared photodetectors doped in different positions
    Lee, SJ
    Lee, SH
    Lee, JI
    Noh, SK
    Kang, SK
    Choe, JW
    Kang, YH
    Lee, UH
    Hong, SC
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 (06) : 825 - 829
  • [24] Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment
    Lin, Wei-Hsun
    Tseng, Chi-Che
    Chao, Kuang-Ping
    Lin, Shih-Yen
    Wu, Meng-Chyi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (05): : 2102 - 2105
  • [25] Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors
    Chen, SD
    Chen, YY
    Lee, SC
    APPLIED PHYSICS LETTERS, 2005, 86 (25) : 1 - 3
  • [26] Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure
    Kim, J. S.
    Kim, E. K.
    Song, J. D.
    Choi, W. J.
    Lee, J. I.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (05) : 2124 - 2127
  • [27] Two-color InAs/InGaAs quantum-dot infrared photodetectors for mid- and long-wavelength infrared detection
    Kim, Eui-Tae
    Chen, Zhonghui
    Madhukar, Anupam
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S837 - S841
  • [28] Thermal annealing study on InGaAs/GaAs quantum dot infrared photodetectors
    Fu, L.
    McKerracher, I.
    Tan, H. H.
    Jagadish, C.
    2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2, 2006, : 550 - +
  • [29] InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
    Wang, SY
    Chen, SC
    Lin, SD
    Lin, CJ
    Lee, CP
    INFRARED PHYSICS & TECHNOLOGY, 2003, 44 (5-6) : 527 - 532
  • [30] Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
    Rimada, J. C.
    Prezioso, M.
    Nasi, L.
    Gombia, E.
    Mosca, R.
    Trevisi, G.
    Seravalli, L.
    Frigeri, P.
    Bocchi, C.
    Franchi, S.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 165 (1-2): : 111 - 114
12345