Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors

被引：7
|
作者：
Kim, Jin Soak [1 ]
Kim, Eun Kyu
Choi, Won Jun
Song, Jin Dong
Lee, Jung Il
机构：
[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Korea Inst Sci & Technol, Nanodevice Res Ctr, Seoul 130650, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6B期
关键词：
deep level transient spectroscopy; quantum dot; infrared photodetector; energy level; InAs/GaAs;
D O I：
10.1143/JJAP.45.5575
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance-voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60eV, which may be considered as an EL2 family in a GaAs material.
引用
收藏
页码：5575 / 5577
页数：3
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