Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs

被引：12
|
作者：
Rimada, J. C. [1 ,2 ]
Prezioso, M. [1 ]
Nasi, L. [1 ]
Gombia, E. [1 ]
Mosca, R. [1 ]
Trevisi, G. [1 ]
Seravalli, L. [1 ]
Frigeri, P. [1 ]
Bocchi, C. [1 ]
Franchi, S. [1 ]
机构：
[1] CNR, IMEM, I-43100 Parma, Italy
[2] Univ La Habana, Lab Celdas Solares, IMRE, Havana 10400, Cuba
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2009年 / 165卷 / 1-2期
关键词：
Indium arsenide; Transmission electron microscopy; Electrical measurements; Molecular beam epitaxy; Quantum dots; GROWTH; DEEP;
D O I：
10.1016/j.mseb.2008.10.007
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work we present the results of an electrical and structural characterization of molecular beam epitaxy (MBE) grown InAs/In0.15Ga0.85As quantum dot (QD) structures having InAs coverages of 2.0 and 3.01ML that are, respectively, below and above the expected critical value for QD ripening in the InAs/GaAs system. The samples have been investigated by atomic force microscopy (AFM), transmission electron microscope (TEM), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. The results obtained by the above techniques are compared and discussed. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：111 / 114
页数：4
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