Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

被引：16
|
作者：
Horváth, ZJ
Dózsa, L
Van Tuyen, V
Podör, B
Nemcsics, A
Frigeri, P
Gombia, E
Mosca, R
Franchi, S
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci MFA, Budapest, Hungary
[2] CNR, Inst Maspec, Fontanini Parma, Italy
来源：
THIN SOLID FILMS | 2000年 / 367卷 / 1-2期
基金：
匈牙利科学研究基金会;
关键词：
quantum dots; quantum wells; molecular beam epitaxy growth of embedded heterostructures;
D O I：
10.1016/S0040-6090(00)00701-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：89 / 92
页数：4
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