Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

被引：16
|
作者：
Horváth, ZJ
Dózsa, L
Van Tuyen, V
Podör, B
Nemcsics, A
Frigeri, P
Gombia, E
Mosca, R
Franchi, S
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci MFA, Budapest, Hungary
[2] CNR, Inst Maspec, Fontanini Parma, Italy
来源：
THIN SOLID FILMS | 2000年 / 367卷 / 1-2期
基金：
匈牙利科学研究基金会;
关键词：
quantum dots; quantum wells; molecular beam epitaxy growth of embedded heterostructures;
D O I：
10.1016/S0040-6090(00)00701-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：89 / 92
页数：4
相关论文
共 50 条
  • [21] Intermittent growth for InAs quantum dot on GaAs(001)
    Toujyou, Takashi
    Konishi, Tomoya
    Hirayama, Motoi
    Yamaguchi, Koichi
    Tsukamoto, Shiro
    [J]. JOURNAL OF CRYSTAL GROWTH, 2020, 551
  • [22] Investigation of the optical properties of InAs/InGaAs/GaAs quantum dot in quantum well multilayer structures for infrared photodetectors
    Ivanov, Ts
    Donchev, V.
    Germanova, K.
    Tellaleva, Ts
    Borissov, K.
    Hongpinyo, V.
    Vines, P.
    David, J. P. R.
    Ooi, B. S.
    [J]. 17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
  • [23] Effects of High Neutron Fluence on The Electrical Characteristics of InAs Quantum Dot Structures
    Fauzi, Dhiyauddin Ahmad
    Rashid, Nahrul Khair Alang Md
    Omar, Nuurul Iffah Che
    Hasbullah, Nurul Fadzlin
    Zin, Muhammad Rawi Mohamed
    [J]. 2013 IEEE 4TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP), 2013, : 226 - 228
  • [24] Memory characteristics of InAs quantum dots embedded in GaAs quantum well
    Kannan, E. S.
    Kim, Gil-Ho
    Ritchie, D. A.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (14)
  • [25] Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
    Tongbram, B.
    Ahmad, A.
    Sengupta, S.
    Mandal, A.
    Singhal, J.
    Balgarkashi, A.
    Chakrabarti, S.
    [J]. JOURNAL OF LUMINESCENCE, 2017, 192 : 89 - 97
  • [26] Persistent photoconductivity in quantum dot layers in InAs/GaAs structures
    Kulbachinskii, VA
    Lunin, RA
    Kytin, VG
    Rogozin, VA
    Gurin, PV
    Zvonkov, BN
    Filatov, DO
    [J]. 2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1297 - 1300
  • [27] Electro- and photoluminescence of InAs/GaAs quantum dot structures
    Oswald, J.
    Hazdra, P.
    Kuldova, K.
    Hospodkova, A.
    Hulicius, E.
    Pangrac, J.
    Vyskocil, J.
    [J]. QUANTUM DOTS 2010, 2010, 245
  • [28] Optical properties of InAs/GaAs quantum dot superlattice structures
    Imran, Ali
    Jiang, Jianliang
    Eric, Deborah
    Zahid, M. Noaman
    Yousaf, M.
    Shah, Z. H.
    [J]. RESULTS IN PHYSICS, 2018, 9 : 297 - 302
  • [29] Enhanced radiation hardness of InAs/GaAs quantum dot structures
    Sobolev, NA
    Cavaco, A
    Carmo, MC
    Grundmann, M
    Heinrichsdorff, F
    Bimberg, D
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (01): : 93 - 96
  • [30] Investigation of local photocurrent spectra in InAs/GaAs quantum dot and quantum well heterostructures
    Aleshkin, VY
    Biryukov, AV
    Gaponov, SV
    Danil'tsev, VM
    Mironov, VL
    Murel, AV
    Shashkin, VI
    [J]. SMART OPTICAL INORGANIC STRUCTURES AND DEVICES, 2001, 4318 : 22 - 25
12345