Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors

被引：7
|
作者：
Kim, Jin Soak [1 ]
Kim, Eun Kyu
Choi, Won Jun
Song, Jin Dong
Lee, Jung Il
机构：
[1] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[2] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[3] Korea Inst Sci & Technol, Nanodevice Res Ctr, Seoul 130650, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6B期
关键词：
deep level transient spectroscopy; quantum dot; infrared photodetector; energy level; InAs/GaAs;
D O I：
10.1143/JJAP.45.5575
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The energy band structure and defect state of an InAs/InGaAs/GaAs quantum dot-infrared photodetector (QDIP) were characterized by performing capacitance-voltage and deep level transient spectroscopy measurements. We found a confined energy level of the InAs/InGaAs quantum dot in the InGaAs/GaAs quantum well. The confined energy in this QDIP structure was measured to be approximately 340 meV below the barrier edge which is located at the conduction band edge of the GaAs layer. This QDIP structure has also a point defect with an activation energy of 0.60eV, which may be considered as an EL2 family in a GaAs material.
引用
收藏
页码：5575 / 5577
页数：3
相关论文
共 50 条
  • [1] Electrical properties of InAs/InGaAs/GaAs quantum-dot infrared photodetectors
    Kim, Jin Soak
    Kim, Eun Kyu
    Choi, Won Jun
    Song, Jin Dong
    Lee, Jung Il
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (6 B): : 5575 - 5577
  • [2] The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
    Lin, Wei-Hsun
    Chao, Kuang-Ping
    Tseng, Chi-Che
    Mai, Shu-Cheng
    Lin, Shih-Yen
    Wu, Meng-Chyi
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [3] Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
    Lin, SY
    Tsai, YJ
    Lee, SC
    APPLIED PHYSICS LETTERS, 2003, 83 (04) : 752 - 754
  • [4] Multicolor InGaAs quantum-dot infrared photodetectors
    Kim, SM
    Harris, JS
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2538 - 2540
  • [5] Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coverages
    Tseng, Chi-Che
    Chung, Tung-Hsun
    Mai, Shu-Cheng
    Chao, Kuang-Ping
    Lin, Wei-Hsun
    Lin, Shih-Yen
    Wu, Meng-Chyi
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
  • [6] Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes
    Park, HK
    Kim, EK
    Lee, CH
    Song, JD
    Choi, WJ
    Park, YJ
    Lee, JI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (01) : 223 - 226
  • [7] Effect of Silicon Dopant on the Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors
    Lin, S.-Y., 1600, Japan Society of Applied Physics (43):
  • [8] Single-Period InAs-GaAs Quantum-Dot Infrared Photodetectors
    Chou, Shu-Ting
    Lin, Shih-Yen
    Tseng, Chi-Che
    Chen, Yi-Hao
    Chen, Cheng-Nan
    Wu, Meng-Chyi
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (17-20) : 1575 - 1577
  • [9] Effect of silicon dopant on the performance of InAs/GaAs quantum-dot infrared photodetectors
    Lin, SY
    Tsai, YJ
    Lee, SC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2004, 43 (2A): : L167 - L169
  • [10] InAs/GaAs quantum-dot infrared photodetectors grown by molecular beam epitaxy
    Pal, D.
    Walker, J.
    Towe, E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1532 - 1535
12345