Normally-off vertical-type mesa-gate GaN MOSFET

被引：5

作者：

Won, Chul-Ho ^{[1
]}

Kim, Ki-Won ^{[2
]}

Kim, Dong-Seok ^{[1
]}

Kang, Hee-Sung ^{[1
]}

Im, Ki-Sik ^{[1
]}

Jo, Young-Woo ^{[1
]}

Kim, Do-Kywn ^{[1
]}

Kim, Ryun-Hwi ^{[1
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu, South Korea

[2] SK Hynix, R&D Div, Inchon, South Korea

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 23期

基金：

新加坡国家研究基金会;

关键词：

ALGAN/GAN HEMT; VOLTAGE; MODE;

D O I：

10.1049/el.2014.1692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertical-type mesa-gate GaN metal-oxide semiconductor field-effect transistor (MOSFET) has been fabricated. The mesa-gate structure can be easily achieved by a single deep etch to the n(+)-GaN which is the drain of the device, whereas the trench-gate structure, the commonly used structure for the vertical-type MOSFETs, requires an additional etching process to define the gate region. The mesa-gate GaN MOSFET exhibited a normally-off operation with the threshold voltage of 3 V, a normalised drain current of similar to 55 mA/mm and a high on/off current ratio of 10(8).

引用

页码：1749 / 1750

页数：2

共 50 条

[41] High-performance normally-off tri-gate GaN power MOSFETs
Zhu, Minghua
Ma, Jun
Nela, Luca
Matioli, Elison
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 71 - 74
[42] Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate
Egorkin V.I.
Zemlyakov V.E.
Kapaev V.V.
Kukhtyaeva O.B.
Kapaev, V.V. (kapaevvv@lebedev.ru), 1600, Pleiades journals (49): : 445 - 451
[43] Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
Kim, Hyun-Seop
Han, Sang-Woo
Jang, Won-Ho
Cho, Chun-Hyung
Seo, Kwang-Seok
Oh, Jungwoo
Cha, Ho-Young
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (08) : 1090 - 1093
[44] Fabrication of normally-off mode GaN and AlGaN/GaN MOSFETs with HfO2 gate insulator
Sugiura, S.
Hayashi, Y.
Kishimoto, S.
Mizutani, T.
Kuroda, M.
Ueda, T.
Tanaka, T.
SOLID-STATE ELECTRONICS, 2010, 54 (01) : 79 - 83
[45] Charge Injection in Normally-Off p-GaN Gate AlGaN/GaN-on-Si HFETs
Savadi, Luca
Iannaccone, Giuseppe
Sicre, Sebastien
Lavanza, Simone
Fiori, Gianluca
Haberlen, Oliver
Curatola, Gilberto
2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2018, : 18 - 21
[46] P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors
Zhu, Minghua
Erine, Catherine
Ma, Jun
Nikoo, Mohammad Samizadeh
Nela, Luca
Sohi, Pirouz
Matioli, Elison
IEEE ELECTRON DEVICE LETTERS, 2021, 42 (01) : 82 - 85
[47] Impact of Gate Stack on the Stability of Normally-Off AlGaN/GaN Power Switching HEMTs
Kaplar, R. J.
Dickerson, J.
DasGupta, S.
Atcitty, S.
Marinella, M. J.
Khalil, S. G.
Zehnder, D.
Garrido, A.
2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 209 - 212
[48] Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer
Benkhelifa, F.
Mueller, S.
Polyakov, V. M.
Ambacher, O.
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (09) : 905 - 907
[49] Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs
Tokuda, Hirokuni
Asubar, Joel T.
Kuzuhara, Masaaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (08)
[50] Time-dependent threshold voltage drift induced by interface traps in normally-off GaN MOSFET with different gate recess technique
Sang, Fei
Wang, Maojun
Tao, Ming
Liu, Shaofei
Yu, Min
Xie, Bing
Wen, Cheng P.
Wang, Jingyan
Wu, Wengang
Hao, Yilong
Shen, Bo
APPLIED PHYSICS EXPRESS, 2016, 9 (09)

← 1 2 3 4 5 →