Normally-off vertical-type mesa-gate GaN MOSFET

被引：5

作者：

Won, Chul-Ho ^{[1
]}

Kim, Ki-Won ^{[2
]}

Kim, Dong-Seok ^{[1
]}

Kang, Hee-Sung ^{[1
]}

Im, Ki-Sik ^{[1
]}

Jo, Young-Woo ^{[1
]}

Kim, Do-Kywn ^{[1
]}

Kim, Ryun-Hwi ^{[1
]}

Lee, Jung-Hee ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn, Taegu, South Korea

[2] SK Hynix, R&D Div, Inchon, South Korea

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 23期

基金：

新加坡国家研究基金会;

关键词：

ALGAN/GAN HEMT; VOLTAGE; MODE;

D O I：

10.1049/el.2014.1692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A vertical-type mesa-gate GaN metal-oxide semiconductor field-effect transistor (MOSFET) has been fabricated. The mesa-gate structure can be easily achieved by a single deep etch to the n(+)-GaN which is the drain of the device, whereas the trench-gate structure, the commonly used structure for the vertical-type MOSFETs, requires an additional etching process to define the gate region. The mesa-gate GaN MOSFET exhibited a normally-off operation with the threshold voltage of 3 V, a normalised drain current of similar to 55 mA/mm and a high on/off current ratio of 10(8).

引用

页码：1749 / 1750

页数：2

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