Impact of back gate bias on hot-carrier effects of n-channel tri-gate FETs (TGFETs)

被引：0

作者：

Lin, Chia-Pin ^{[1
]}

Tsui, Bing-Yue ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Room ED630,1001,Ta Hsueh Rd, Hsinchu, Taiwan

来源：

2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS | 2006年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The hot-carrier effects of non-planar tri-gate SOI FET (TGFET) with back-gate bias were investigated. Negative back gate bias could raise the influence of buried oxide defects and then degrade the device quickly. For TGFETs with ultra-narrow fin width and side gate extension, the smaller buried oxide interface area and more obvious screening effect terminate the field lines to obviate the back gate bias efficiently. The extrapolated hot-carrier lifetime encourages the TGFETs as promising sub-10nm devices.

引用

页码：82 / +

页数：2

共 50 条

[31] AC VERSUS DC HOT-CARRIER DEGRADATION IN N-CHANNEL MOSFETS
MISTRY, KR
DOYLE, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (01) : 96 - 104
[32] Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET
Zhang, Xinyi
Wang, Kewei
Wang, Fang
Li, Jiangjiang
Wu, Zhicheng
Li, Duoli
Li, Bo
Bu, Jianhui
Han, Zhengsheng
2023 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS, 2023,
[33] ANALYSIS OF GATE OXIDE THICKNESS HOT-CARRIER EFFECTS IN SURFACE CHANNEL P-MOSFETS
DOYLE, BS
MISTRY, KR
HUANG, CL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (01) : 116 - 122
[34] Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs
Park, Jun-Young
Yun, Dae-Hwan
Choi, Yang-Kyu
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (12) : 1909 - 1912
[35] LOW-LEAKAGE N-CHANNEL SILICON-GATE FETS AND P-CHANNEL SILICON-GATE FETS WITH AN SIO2-SI3N4-GATE INSULATOR
DOCKERTY, RC
ABBAS, SA
BARILE, CA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (02) : 33 - 39
[36] Effects of gate bias on hot-carrier reliability in drain extended metal-oxide-semiconductor transistors
Wu, K. M.
Chen, J. F.
Su, Y. K.
Lee, J. R.
Lin, K. W.
Shih, J. R.
Hsu, S. L.
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[37] HOT-CARRIER EFFECTS IN N-CHANNEL MOS-TRANSISTORS UNDER ALTERNATING STRESS CONDITIONS
BELLENS, R
HEREMANS, P
GROESENEKEN, G
MAES, HE
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 232 - 234
[38] PRECISE MODELING OF HOT-CARRIER GATE CURRENT IN SHORT-CHANNEL MOSFETS
ELHENNAWY, AE
MOBAREK, OH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (09) : 1645 - 1652
[39] THE EFFECT OF CHANNEL HOT-CARRIER STRESSING ON GATE-OXIDE INTEGRITY IN MOSFETS
CHEN, IC
CHOI, JY
CHAN, TY
HU, CM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2253 - 2258
[40] INFLUENCE OF POSTSTRESS EFFECTS ON THE DYNAMIC HOT-CARRIER DEGRADATION BEHAVIOR OF PASSIVATED N-CHANNEL MOSFET
BELLENS, R
DESCHRIJVER, E
GROESENEKEN, G
HEREMANS, P
MAES, HE
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (07) : 357 - 359

← 1 2 3 4 5 →