New SRAM Design Using Body Bias Technique for Ultra Low Power Applications

被引：0
|
作者：
Moradi, Farshad [1 ,3 ]
Wisland, Dag T. [1 ]
Mahmoodi, Hamid [2 ]
Berg, Yngvar [1 ]
Tuan Vu Cao [1 ]
机构：
[1] Univ Oslo, Dept Informat, Nanoelect Grp, NO-0316 Oslo, Norway
[2] San Francisco State Univ, Sch Engn, San Francisco, CA 94132 USA
[3] Purdue Univ, Dept ECE, W Lafayette, IN 47907 USA
来源：
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED 2010) | 2010年
关键词：
SRAM; Static Noise Margin; Low power; 65nm;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.
引用
收藏
页码：468 / 471
页数：4
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