New SRAM Design Using Body Bias Technique for Ultra Low Power Applications

被引：0

作者：

Moradi, Farshad ^{[1
,3
]}

Wisland, Dag T. ^{[1
]}

Mahmoodi, Hamid ^{[2
]}

Berg, Yngvar ^{[1
]}

Tuan Vu Cao ^{[1
]}

机构：

[1] Univ Oslo, Dept Informat, Nanoelect Grp, NO-0316 Oslo, Norway

[2] San Francisco State Univ, Sch Engn, San Francisco, CA 94132 USA

[3] Purdue Univ, Dept ECE, W Lafayette, IN 47907 USA

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN (ISQED 2010) | 2010年

关键词：

SRAM; Static Noise Margin; Low power; 65nm;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.

引用

页码：468 / 471

页数：4

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