Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

被引：0

作者：

Ebihara, Yasuhiro ^{[1
]}

Uehara, Junichi ^{[1
]}

Ichimura, Aiko ^{[1
]}

Mitani, Shuhei ^{[1
]}

Noborio, Masato ^{[1
]}

Takeuchi, Yuichi ^{[1
]}

Tsuruta, Kazuhiro ^{[1
]}

机构：

[1] DENSO Corp, Nisshin, Aichi 4700111, Japan

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

关键词：

SiC-MOSFET; bipolar degradation; body-diode;

D O I：

10.1109/ispsd.2019.8757567

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current density. The fabricated MOSFETs exhibit the low hole injection compared with the PN diodes and conventional MOSFETs, resulted in the fabricated MOSFETs suppressed the bipolar degradation up to a current density of 3000 A/cm(2).

引用

页码：35 / 38

页数：4

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