Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

被引：0
|
作者：
Ebihara, Yasuhiro [1 ]
Uehara, Junichi [1 ]
Ichimura, Aiko [1 ]
Mitani, Shuhei [1 ]
Noborio, Masato [1 ]
Takeuchi, Yuichi [1 ]
Tsuruta, Kazuhiro [1 ]
机构：
[1] DENSO Corp, Nisshin, Aichi 4700111, Japan
来源：
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年
关键词：
SiC-MOSFET; bipolar degradation; body-diode;
D O I：
10.1109/ispsd.2019.8757567
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current density. The fabricated MOSFETs exhibit the low hole injection compared with the PN diodes and conventional MOSFETs, resulted in the fabricated MOSFETs suppressed the bipolar degradation up to a current density of 3000 A/cm(2).
引用
收藏
页码：35 / 38
页数：4
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