High quality epitaxial graphene on 4H-SiC by face-to-face growth in ultra-high vacuum

被引:10
|
作者
Zebardastan, Negar [1 ,2 ]
Bradford, Jonathan [1 ,3 ]
Lipton-Duffin, Josh [1 ,2 ]
MacLeod, Jennifer [1 ,2 ]
Ostrikov, Kostya [1 ,2 ]
Tomellini, Massimo [4 ,5 ]
Motta, Nunzio [1 ,2 ]
机构
[1] Queensland Univ Technol, Sch Chem & Phys, Brisbane, Qld 4000, Australia
[2] Queensland Univ Technol, Ctr Mat Sci, Brisbane, Qld 4000, Australia
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[4] Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, Via Ric Sci, I-00133 Rome, Italy
[5] CNR, Ist Struttura Mat, Via Fosso Cavaliere 100, I-00133 Rome, Italy
关键词
epitaxial graphene; thermal decomposition; silicon sublimation; ultra-high vacuum; face to face growth; SiC; LARGE-AREA; SILICON-CARBIDE; SIC; 0001; SUBSTRATE; GRAPHITE; GRAPHITIZATION; SUBLIMATION; EVOLUTION; LAYERS; METAL;
D O I
10.1088/1361-6528/aca8b2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Epitaxial graphene on SiC is the most promising substrate for the next generation 2D electronics, due to the possibility to fabricate 2D heterostructures directly on it, opening the door to the use of all technological processes developed for silicon electronics. To obtain a suitable material for large scale applications, it is essential to achieve perfect control of size, quality, growth rate and thickness. Here we show that this control on epitaxial graphene can be achieved by exploiting the face-to-face annealing of SiC in ultra-high vacuum. With this method, Si atoms trapped in the narrow space between two SiC wafers at high temperatures contribute to the reduction of the Si sublimation rate, allowing to achieve smooth and virtually defect free single graphene layers. We analyse the products obtained on both on-axis and off-axis 4H-SiC substrates in a wide range of temperatures (1300 degrees C-1500 degrees C), determining the growth law with the help of x-ray photoelectron spectroscopy (XPS). Our epitaxial graphene on SiC has terrace widths up to 10 mu m (on-axis) and 500 nm (off-axis) as demonstrated by atomic force microscopy and scanning tunnelling microscopy, while XPS and Raman spectroscopy confirm high purity and crystalline quality.
引用
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页数:15
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