GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

被引：49
|
作者：
Lee, Chul-Ho [2 ]
Yoo, Jinkyoung [2 ]
Hong, Young Joon [2 ]
Cho, Jeonghui [2 ]
Kim, Yong-Jin [2 ]
Jeon, Seong-Ran [3 ]
Baek, Jong Hyeob [3 ]
Yi, Gyu-Chul [1 ]
机构：
[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Dept Phys & Astron, Seoul 151747, South Korea
[2] POSTECH, Natl Creat Res Initiat Ctr Semicond Nanorods, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
[3] Korea Photon Technol Inst, Kwangju 500460, South Korea
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 21期
基金：
新加坡国家研究基金会;
关键词：
electroluminescence; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; nanotubes; wide band gap semiconductors; zinc compounds; NANOWIRE HETEROSTRUCTURES; NANOROD HETEROSTRUCTURES; GROWTH;
D O I：
10.1063/1.3139865
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN, GaN/In0.24Ga0.76N multiquantum well (MQW) structures and p-GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c-plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/In0.24Ga0.76N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.
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页数：3
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