Fabrication and Characterization of High Quality ZnO Nanowires/GaN Heterojunction Light Emitting Diode

The n-ZnO nanowires were fabricated on p-GaN substrates through the vapor deposition method without catalyst. The XRD and FESEM measurements have been carried out, which indicates the high-quality ZnO nanowires obtained. The In to ZnO nanowires is ohmic contact, the Ni/Au (10/20 nm) to p-GaN also show the good ohmic contact by annealing in oxygen atmosphere 5 min. I-V characteristic curves of n-ZnO nanowire/p-GaN heterojunction show a very good rectifying property. The strong blue no defect electroluminescence (EL) emission was observed in ZnO nanowire/GaN LED.