Ultraviolet light emitting diode based on ZnO nanowires

被引：22
|
作者：
Sun Hui [1 ]
Zhang Qi-Feng [1 ]
Wu Jin-Lei [1 ]
机构：
[1] Peking Univ, Dept Elect, Beijing 100871, Peoples R China
来源：
ACTA PHYSICA SINICA | 2007年 / 56卷 / 06期
关键词：
ZnO nanowires; heterojunction; electroluminescence; hydrothermal method;
D O I：
10.7498/aps.56.3479
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The ultraviolet light emitting diode based on n-ZnO-nanowire/p-Si heterojunction was fabricated. Quasi-arrays of ZnO nanowires were grown on p-Si substrates using a simple low-temperature hydrothermal method that would be easily extended to mass production. As-grown ZnO nanowires showed good crystallinity, a preferable c axial orientation, and strong ultraviolet emission under optical excitation. Different kinds of cathodes were made to form the electrical contact. The I-V characteristics were diode-like. Under forward bias, the heterojunction diode emitted strong ultraviolet light at 387 nm and weaker green light.
引用
收藏
页码：3479 / 3482
页数：4
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