GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays

被引：49

作者：

Lee, Chul-Ho ^{[2
]}

Yoo, Jinkyoung ^{[2
]}

Hong, Young Joon ^{[2
]}

Cho, Jeonghui ^{[2
]}

Kim, Yong-Jin ^{[2
]}

Jeon, Seong-Ran ^{[3
]}

Baek, Jong Hyeob ^{[3
]}

Yi, Gyu-Chul ^{[1
]}

机构：

[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Dept Phys & Astron, Seoul 151747, South Korea

[2] POSTECH, Natl Creat Res Initiat Ctr Semicond Nanorods, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea

[3] Korea Photon Technol Inst, Kwangju 500460, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

electroluminescence; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; nanotubes; wide band gap semiconductors; zinc compounds; NANOWIRE HETEROSTRUCTURES; NANOROD HETEROSTRUCTURES; GROWTH;

D O I：

10.1063/1.3139865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN, GaN/In0.24Ga0.76N multiquantum well (MQW) structures and p-GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c-plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/In0.24Ga0.76N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.

引用

页数：3

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