Light-emitting diode based on ZnO and GaN direct wafer bonding

被引：13
|
作者：
Murai, Akihiko [1 ]
Thompson, Daniel B.
Chen, Christina Ye
Mishra, Umesh K.
Nakamura, Shuji
DenBaars, Steven P.
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 37-41期
关键词：
ZnO; GaN; wafer bonding; light-emitting diode; transmission; current-voltage; electroluminescence; CONTACTS; FUSION;
D O I：
10.1143/JJAP.45.L1045
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on direct wafer bonding of an n-type ZnO wafer to a III-nitride light-emitting diode (LED) structure. Wafers were successfully bonded in nitrogen at 600 degrees C. ZnO was then selectively etched to form a p-type electrode having a truncated hexagonal pyramid shape. This wafer bonded LED was evaluated with transmission, reflectivity, current-voltage (I-V), and electroluminescence (EL) measurements. This electrode revealed to be highly transparent and suitable for improving light extraction.
引用
收藏
页码：L1045 / L1047
页数：3
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