Enhancement-mode GaAs n-channel MOSFET

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOS-FETs feature an In0.3Ga0.7As channel layer, a channel mobility of up to 6207 cm(2)/V (.) s, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mu m, a source/drain spacing of 3 mu m, and a threshold voltage of 0.05 V show a saturation current, transconductance, ON-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omega (.) mm, and 162 mV/dec, respectively.