Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays

被引：52
|
作者：
Hong, Chi-Chang [1 ,2 ]
Ahn, Hyeyoung [1 ,2 ]
Wu, Chen-Ying [3 ]
Gwo, Shangjr [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
来源：
OPTICS EXPRESS | 2009年 / 17卷 / 20期
关键词：
MOLECULAR-BEAM EPITAXY; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; TEMPERATURE; BLUE; SHIFT; LUMINESCENCE; EMISSION; GROWTH;
D O I：
10.1364/OE.17.017227
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
引用
收藏
页码：17227 / 17233
页数：7
相关论文
共 50 条
  • [1] Photoluminescence and gain of MBE grown cubic InxGa1-xN/GaN heterostructures
    Frey, T
    As, DJ
    Schikora, D
    Lischka, K
    Holst, J
    Hoffmann, A
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 216 (01): : 259 - 263
  • [2] Micro-photoluminescence study of InxGa1-xN/GaN quantum wells
    Oh, E
    Park, H
    Sone, C
    Nam, O
    Park, Y
    Kim, T
    SOLID STATE COMMUNICATIONS, 2000, 113 (08) : 461 - 464
  • [3] InxGa1-xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1-xN
    Manz, Ch.
    Kunzer, M.
    Obloh, H.
    Ramakrishnan, A.
    Kaufmann, U.
    Applied Physics Letters, 74 (26):
  • [4] InxGa1-xN/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1-xN
    Manz, C
    Kunzer, M
    Obloh, H
    Ramakrishnan, A
    Kaufmann, U
    APPLIED PHYSICS LETTERS, 1999, 74 (26) : 3993 - 3995
  • [5] Investigations on the nanostructures of GaN, InN and InxGa1-xN
    Bagavath, C.
    Nasi, L.
    Kumar, J.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 49 : 61 - 67
  • [6] Evidence of strong indium segregation in MOCVD InxGa1-xN/GaN quantum layers
    Maciejewski, G
    Jurczak, G
    Kret, S
    Dluewski, P
    Ruterana, P
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 811 - 816
  • [7] Pyroelectric Effect in InxGa1-xN/GaN Heterostructure
    Swain, Muralidhar
    Sahoo, Bijay Kumar
    Sahoo, Sushant Kumar
    DAE SOLID STATE PHYSICS SYMPOSIUM 2018, 2019, 2115
  • [8] Interface dislocations in InxGa1-xN/GaN heterostructures
    Li, Q. T.
    Minj, A.
    Chauvat, M. P.
    Chen, J.
    Ruterana, P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (04):
  • [9] Large bandgap bowing of InxGa1-xN films and growth of blue/green InxGa1-xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures
    Lee, Kang Jea
    Oh, Tae Su
    Kim, Tae Ki
    Yang, Gye Mo
    Lim, Kee Young
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 1412 - 1415
  • [10] Photoluminescence excitation spectroscopy of InxGa1-xN/GaN multiple quantum wells with various in compositions
    Sasaki, C
    Iwata, M
    Yamada, Y
    Taguchi, T
    Watanabe, S
    Minsky, MS
    Takeuchi, T
    Yamada, N
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (01): : 133 - 136
12345