Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays

被引：52
|
作者：
Hong, Chi-Chang [1 ,2 ]
Ahn, Hyeyoung [1 ,2 ]
Wu, Chen-Ying [3 ]
Gwo, Shangjr [3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
来源：
OPTICS EXPRESS | 2009年 / 17卷 / 20期
关键词：
MOLECULAR-BEAM EPITAXY; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; TEMPERATURE; BLUE; SHIFT; LUMINESCENCE; EMISSION; GROWTH;
D O I：
10.1364/OE.17.017227
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
引用
收藏
页码：17227 / 17233
页数：7
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