Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays

被引：52

作者：

Hong, Chi-Chang ^{[1
,2
]}

Ahn, Hyeyoung ^{[1
,2
]}

Wu, Chen-Ying ^{[3
]}

Gwo, Shangjr ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

OPTICS EXPRESS | 2009年 / 17卷 / 20期

关键词：

MOLECULAR-BEAM EPITAXY; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; TEMPERATURE; BLUE; SHIFT; LUMINESCENCE; EMISSION; GROWTH;

D O I：

10.1364/OE.17.017227

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America

引用

页码：17227 / 17233

页数：7

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