Micro-photoluminescence study of InxGa1-xN/GaN quantum wells

被引：4

作者：

Oh, E ^{[1
]}

Park, H ^{[1
]}

Sone, C ^{[1
]}

Nam, O ^{[1
]}

Park, Y ^{[1
]}

Kim, T ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 113卷 / 08期

关键词：

quantum wells; semiconductors; optical properties;

D O I：

10.1016/S0038-1098(99)00512-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In micro-photoluminescence (PL) study of a green InxGal-xN/GaN single quantum well at room temperature, we observed some areas in the sample where only weak blue emission was detected. One of the difficulties in obtaining high quality InxGal-xN/GaN quantum wells is the large difference in optimum growth temperatures for InxGal-xN and GaN. By decreasing the growth temperature of GaN barriers in violet InxGal-xN/GaN quantum wells, the PL emission was observed to be weaker for lower excitation density, but stronger for higher excitation density. It is emphasized that optical characterization under high excitation density is necessary for device applications such as laser diode structures. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：461 / 464

页数：4

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