A Comparison of Two Frequency Synthesizer Architectures in SiGe BiCMOS for FMCW Radar

被引:0
|
作者
Ergintav, Arzu [1 ]
Herzel, Frank [1 ]
Mushtaq, Ahmad [2 ]
Debski, Wojciech [2 ]
Ng, Herman Jalli [1 ]
Kissinger, Dietmar [1 ,3 ]
机构
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Silicon Radar GmbH, Technol Pk 1, D-15236 Frankfurt, Oder, Germany
[3] Tech Univ Berlin, Einsteinufer 17, D-10587 Berlin, Germany
关键词
SiGe BiCMOS; frequency modulated continuous wave (FMCW); automotive radar; phase-locked loop (PLL); mm-wave frequency synthesis;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a fractional-N phase-locked loop (PLL) with an option to operate either in single-loop or in dual-loop configuration. The PLL is composed of two chips: a voltage controlled oscillator (VCO) chip and a synthesizer chip that are integrated on one printed circuit board. In the synthesizer chip, a chirp generation circuit is included for frequency-modulated continuous-wave (FMCW) radar systems. The measurement results reveal that in the steady state the dual-loop operation is superior over single-loop operation due to its lower in-band phase noise. This makes it attractive for FMCW radar using slow frequency ramps. By contrast, in the case of fast frequency ramps the single-loop configuration is preferred due to its higher VCO gain resulting in a faster frequency settling. The circuits are fabricated in a 0.13 mu m SiGe BiCMOS technology and are well suited for highly integrated FMCW radar systems at 80GHz. They offer high flexibility in programming ramp type, ramp duration and modulation bandwidth.
引用
收藏
页码:334 / 337
页数:4
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