共 32 条
- [1] A 60-GHz Super-Regenerative Oscillator with 80 dB Gain in SiGe BiCMOS for FMCW Radar Active Reflecetors [J]. 2022 IEEE 22ND TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2022, : 31 - 34
- [4] A 240 GHz Direct Conversion IQ Receiver in 0.13 μm SiGe BiCMOS Technology [J]. 2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 305 - 308
- [5] 77 GHz automotive radar receiver front-end in SiGe:C BICMOS technology [J]. ESSCIRC 2006: PROCEEDINGS OF THE 32ND EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2006, : 388 - +
- [6] A 122-150 GHz LNA with 30 dB Gain and 6.2 dB Noise Figure in SiGe BiCMOS Technology [J]. 2015 IEEE 15TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2015, : 15 - 17
- [7] A 110 GHz LNA with 20 dB Gain and 4 dB Noise Figure in an 0.13 μm SiGe BiCMOS Technology [J]. 2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
- [8] A W-band SiGe BiCMOS I/Q Receiver with Tunable Conversion Gain for Radar Applications [J]. PROCEEDINGS OF THE 28TH INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (MIXDES 2021), 2021, : 81 - 84
- [9] A Low-Power SiGe BiCMOS 190 GHz Receiver with 47 dB Conversion Gain and 11 dB Noise Figure for Ultra-Large-Bandwidth Applications [J]. 2016 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2016, : 290 - 293