A Ku-Band LNA in 0.35-μm SiGe BiCMOS Technology

被引：0

作者：

Liu, Bing ^{[1
]}

Ma, Kaixue ^{[1
]}

Mou, Shouxian ^{[1
]}

Meng, Fanyi ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Sichuan, Peoples R China

来源：

2017 INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IEEE IWEM 2017) | 2017年

基金：

中国国家自然科学基金;

关键词：

LNA; Ku-Band; SiGe BiCMOS; POWER; GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Ku-Band low-noise amplifier using 0.35-mu m SiGe BiCMOS technology. An inductively degenerated common-source topology combined with floating-body transistors are used to improve the noise figure of the LNA. The simulation results show that this 3-stage LNA achieves 3.2 dB minimum noise figure and 18.5 dB power gain over 12-18 GHz. An output P-1dB of 8.6 dBm is obtained at 15 GHz. And the core area of this LNA is only 0.65x0.40 mm(2) excluding testing pads.

引用

页码：168 / 170

页数：3

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