A Ku-Band LNA in 0.35-μm SiGe BiCMOS Technology

被引：0

作者：

Liu, Bing ^{[1
]}

Ma, Kaixue ^{[1
]}

Mou, Shouxian ^{[1
]}

Meng, Fanyi ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Sichuan, Peoples R China

来源：

2017 INTERNATIONAL WORKSHOP ON ELECTROMAGNETICS: APPLICATIONS AND STUDENT INNOVATION COMPETITION (IEEE IWEM 2017) | 2017年

基金：

中国国家自然科学基金;

关键词：

LNA; Ku-Band; SiGe BiCMOS; POWER; GHZ;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Ku-Band low-noise amplifier using 0.35-mu m SiGe BiCMOS technology. An inductively degenerated common-source topology combined with floating-body transistors are used to improve the noise figure of the LNA. The simulation results show that this 3-stage LNA achieves 3.2 dB minimum noise figure and 18.5 dB power gain over 12-18 GHz. An output P-1dB of 8.6 dBm is obtained at 15 GHz. And the core area of this LNA is only 0.65x0.40 mm(2) excluding testing pads.

引用

页码：168 / 170

页数：3

共 50 条

[31] A 52dB Spurious-Free Dynamic Range Ku-band LNA-Mixer in a 130nm SiGe BiCMOS process
Bhatia, Apoorva
Darwhekar, Yogesh
Mukherjee, Subhashish
Martin, Samuel
Krishnapura, Nagendra
2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2020,
[32] IMPEDANCE MATCHING WILKINSON POWER DIVIDERS IN 0.35 μm SiGe BiCMOS TECHNOLOGY
Kaymaksut, Ercan
Gurbuz, Yasar
Tekin, Ibrahim
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2009, 51 (03) : 681 - 685
[33] Monolithic millimeterwave frequency tripler using a 0.35 μm BiCMOS SiGe technology
Coustou, A
Dubuc, D
Graffeuil, J
Tournier, E
Llopis, O
Boulanger, C
Plana, R
Telliez, I
2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2003, : 487 - 490
[34] Analysis and design of Colpitts VCO using 0.35 μm SiGe BiCMOS technology
Institute of RF- and OE-ICs, Southeast University, Nanjing 210096, China
Guti Dianzixue Yanjiu Yu Jinzhan, 2008, 1 (129-132+157):
[35] A novel HBT trigger SCR in 0.35 mu m SiGe BiCMOS technology
Liao Changjun
Liu Jizhi
Liu Zhiwei
JOURNAL OF SEMICONDUCTORS, 2016, 37 (09)
[36] A Very Low Phase-Noise Ku-Band Resistively Coupled VCO Array in 0.25 μm SiGe:C BiCMOS
Hyvert, Jeremy
Cordeau, David
Paillot, Jean-Marie
Philippe, Pascal
2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 501 - 504
[37] Active mixers for direct conversion receivers with 0.35-μm BiCMOS
Kiveka¨s K.
Pa¨rssinen A.
Halonen K.
Analog Integrated Circuits and Signal Processing, 2001, 26 (01) : 17 - 26
[38] Active mixers for direct conversion receivers with 0.35-μm BiCMOS
Kivekäs, K
Pärssinen, A
Halonen, K
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2000, 26 (01) : 17 - 26
[39] Ku-Band MMIC LNA Design for Space Applications
Arican, Galip Orkun
Akcam, Nursel
Yazgan, Erdem
2019 6TH INTERNATIONAL CONFERENCE ON ELECTRICAL AND ELECTRONICS ENGINEERING (ICEEE 2019), 2019, : 274 - 278
[40] Ku-Band Integrated Building Blocks for Phased-Array Transmitter Design in SiGe:C BiCMOS
Ansari, Kimia T.
Plett, Calvin
Gamand, Patrice
2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2015, : 9 - 12

← 1 2 3 4 5 →