A Very Low Phase-Noise Ku-band Coupled VCO in 0.25 μm SiGe:C BiCMOS Technology With Low Frequency Pushing

被引：0
|
作者：
Hyvert, Jeremy [1 ,2 ]
Cordeau, David [1 ]
Paillot, Jean-Marie [1 ]
机构：
[1] Univ Poitiers, CNRS XLIM, UMR 7252, Angouleme, France
[2] NXP Semicond, Caen, France
来源：
2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2017年
关键词：
BiCMOS; VCO; VSAT; Class-C; Phase noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a fully integrated Ku-band coupled Voltage Controlled Oscillator (VCO) with very low phase noise performances, implemented in the QUBiC4X 0.25 mu m SiGe:C BiCMOS process of NXP semiconductors. The originality of this design consists in using two coupled VCOs with a new bias circuit to improve the pushing and the phase noise. Under 5 V supply voltage and a maximum total power dissipation of 231.5 mW, the proposed VCO features a phase noise of -121.4 dBc/Hz at 1 MHz frequency offset. The VCO is tuned from 13.53 GHz to 14.79 GHz with a tuning voltage varying from 1 V to 4.5 V and occupies 0.84x1.85 mm(2).
引用
收藏
页码：162 / 165
页数：4
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