A Very Low Phase-Noise Ku-band Coupled VCO in 0.25 μm SiGe:C BiCMOS Technology With Low Frequency Pushing

被引：0

作者：

Hyvert, Jeremy ^{[1
,2
]}

Cordeau, David ^{[1
]}

Paillot, Jean-Marie ^{[1
]}

机构：

[1] Univ Poitiers, CNRS XLIM, UMR 7252, Angouleme, France

[2] NXP Semicond, Caen, France

来源：

2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2017年

关键词：

BiCMOS; VCO; VSAT; Class-C; Phase noise;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a fully integrated Ku-band coupled Voltage Controlled Oscillator (VCO) with very low phase noise performances, implemented in the QUBiC4X 0.25 mu m SiGe:C BiCMOS process of NXP semiconductors. The originality of this design consists in using two coupled VCOs with a new bias circuit to improve the pushing and the phase noise. Under 5 V supply voltage and a maximum total power dissipation of 231.5 mW, the proposed VCO features a phase noise of -121.4 dBc/Hz at 1 MHz frequency offset. The VCO is tuned from 13.53 GHz to 14.79 GHz with a tuning voltage varying from 1 V to 4.5 V and occupies 0.84x1.85 mm(2).

引用

页码：162 / 165

页数：4

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