A Ku-band frequency converter using 0.25 μm PHEMT technology

被引：0
|
作者：
Virk, RS [1 ]
Camargo, E [1 ]
Shimizu, H [1 ]
Ichikawa, S [1 ]
机构：
[1] Fujitsu Compound Semiconductor Inc, San Jose, CA 95131 USA
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and performance of a Ku-band frequency converter is described for a 0.25 mum GaAs pHEMT technology. The 1.0 x 1.6 mm(2) mixer chip provides as low as 4.5 dB up-conversion loss and 7 dB down-conversion loss over the Ku-band where f(IF) = 1 GHz.
引用
收藏
页码：639 / 642
页数：4
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