Differential ECL/CML Synthesis for SiGe BiCMOS

被引：0

作者：

Gustat, Hans ^{[1
]}

Jagdhold, Ulrich ^{[1
]}

Winkler, Frank ^{[2
]}

Appel, Markus ^{[2
]}

机构：

[1] IHP Microelect, Dept Circuit Design, Frankfurt, Oder, Germany

[2] Humboldt Univ zu Berlin, Dept Comp Sci, Berlin, Germany

来源：

2008 IEEE CSIC SYMPOSIUM | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel SiGe ECL/CML design flow is presented for the first time. It provides CMOS-style synthesis with differential SiGe BiCMOS ECL standard cells. A first version works in a 95GHz one-mask HBT technology up to about 10GHz clock rate. A synthesized CML/ECL FIFO buffer example with 497 ECL gates works up to 3 GHz data rate.

引用

页码：198 / +

页数：2

共 50 条

[21] AUTOMATED PARAMETRIC TESTING OF ECL AND CML DEVICES
KAWABATA, F
SOLID STATE TECHNOLOGY, 1979, 22 (10) : 112 - 116
[22] A 108-GHz Retimer Based on 1.8V Quasi-ECL MOS-HBT SiGe BiCMOS Logic
Fu, Yingying
Voinigescu, Sorin P.
2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
[23] Design of ECL 1-Mb BiCMOS DRAM
Kitsukawa, Goro
Kawajiri, Yoshiki
Itoh, Kiyoo
Yanagisawa, Kazumasa
Nakamura, Masayuki
Miyazawa, Kazuyuki
Akiba, Takesada
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1992, 75 (05): : 89 - 102
[24] BICMOS, ECL AND GAAS CHIPS FIGHT FOR SOCKETS IN 1990
MEYER, E
COMPUTER DESIGN, 1990, 29 (01): : 39 - 43
[25] ESD robustness of a BiCMOS SiGe technology
Voldman, S
Juliano, P
Schmidt, N
Botula, A
Johnson, R
Lanzerotti, L
Feilschenfeld, N
Joseph, A
Malinowski, J
Eld, E
Gross, V
Brennan, C
Dunn, J
Harame, D
Herman, D
Meyerson, B
PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2000, : 214 - 217
[26] Low temperature simulation of SiGe ECL circuit
Amon, S
Sokolic, S
PROCEEDINGS OF THE FOURTH SYMPOSIUM ON LOW TEMPERATURE ELECTRONICS AND HIGH TEMPERATURE SUPERCONDUCTIVITY, 1997, 97 (02): : 279 - 286
[27] A 40 Gb/s Fully Differential Transimpedance Amplifier in 0.13 μm SiGe BiCMOS Technology
Luo, Xianliang
Li, Wei
Tang, Pan
2015 INTERNATIONAL SYMPOSIUM ON INTELLIGENT SIGNAL PROCESSING AND COMMUNICATION SYSTEMS (ISPACS), 2015, : 312 - 316
[28] A Fully Differential Low Phase Noise and Extra Linear VCO Design in SiGe BiCMOS Technology
Seyedi, M. H.
Dousti, M.
Temcamani, F.
Gautierassoud, J. L.
2008 3RD INTERNATIONAL CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGIES: FROM THEORY TO APPLICATIONS, VOLS 1-5, 2008, : 2449 - +
[29] Research and Development of a Differential Microwave Attenuator Based on BiCMOS SiGe Technology with Continuous Attenuation Control
Kalyonov, Alexander
Morozov, Dmitry
Repin, Vladimir
Mukhin, Alexander
PROCEEDINGS OF THE 2019 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (EICONRUS), 2019, : 1620 - 1623
[30] A SiGe:C BiCMOS 140 GHz Wideband Frequency Multiplier-by-8 with Differential Output
Yuan, Shuai
Schumacher, Hermann
2013 8TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2013, : 248 - 251

← 1 2 3 4 5 →