Differential ECL/CML Synthesis for SiGe BiCMOS

被引：0

作者：

Gustat, Hans ^{[1
]}

Jagdhold, Ulrich ^{[1
]}

Winkler, Frank ^{[2
]}

Appel, Markus ^{[2
]}

机构：

[1] IHP Microelect, Dept Circuit Design, Frankfurt, Oder, Germany

[2] Humboldt Univ zu Berlin, Dept Comp Sci, Berlin, Germany

来源：

2008 IEEE CSIC SYMPOSIUM | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel SiGe ECL/CML design flow is presented for the first time. It provides CMOS-style synthesis with differential SiGe BiCMOS ECL standard cells. A first version works in a 95GHz one-mask HBT technology up to about 10GHz clock rate. A synthesized CML/ECL FIFO buffer example with 497 ECL gates works up to 3 GHz data rate.

引用

页码：198 / +

页数：2

共 50 条

[41] Impact of nickel silicide on SiGe BiCMOS devices
Wolansky, Dirk
Grabolla, Thomas
Lenke, Thomas
Schulze, Sebastian
Zaumseil, Peter
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
[42] SiGe BiCMOS manufacturing platform for mmWave applications
Kar-Roy, Arjun
Howard, David
Preisler, Edward
Racanelli, Marco
Chaudhry, Samir
Blaschke, Volker
MILLIMETRE WAVE AND TERAHERTZ SENSORS AND TECHNOLOGY III, 2010, 7837
[43] Measured results on bandgap reference in SiGe BICMOS
Ainspan, HA
Webster, CS
ELECTRONICS LETTERS, 1998, 34 (15) : 1441 - 1442
[44] Process stability of SiGe heterostructures for BiCMOS applications
Ribot, P.
Jouan, S.
Regolini, J.L.
Journal De Physique. IV : JP, 1999, 9 pt 1 (08): : 8 - 327
[45] Epitaxial growth of SiGe layers for BiCMOS applications
Regolini, JL
Pejnefors, J
Baffert, T
Morin, C
Ribot, P
Jouan, S
Marty, M
Chantre, A
RAPID THERMAL PROCESSING, 1999, 84 : 317 - 323
[46] Monolithic Integration of Photonic Devices in SiGe BiCMOS
Zimmermann, L.
Knoll, D.
Lischke, S.
Petousi, D.
Kroh, M.
Winzer, G.
Heinemann, B.
Ostrovskyy, P.
Micusik, D.
Lisker, M.
Fursenko, O.
Marschmeyer, S.
Yamamoto, Y.
Voigt, K.
Wohlfeil, B.
Tillack, B.
Petermann, K.
2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2014,
[47] Integrated Photodiode Characterization in a SiGe BiCMOS Process
Sharif-Bakhtiar, Alireza
Shahramian, Shayan
Rousson, Alain
Yasotharan, Hemesh
Carusone, Tony Chan
2013 IEEE OPTICAL INTERCONNECTS CONFERENCE, 2013, : 68 - 69
[48] Epitaxial growth of SiGe layers for BiCMOS applications
Regolini, J.L.
Pejnefors, J.
Baffert, T.
Morin, C.
Ribot, P.
Jouan, S.
Marty, M.
Chantre, A.
Materials Science in Semiconductor Processing, 1998, 1 (3-4): : 317 - 323
[49] K-Band Differential and Quadrature Digitally-Controlled Oscillator Designs in SiGe BiCMOS Technology
Maxey, Christopher
Raman, Sanjay
2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2014, : 110 - 112
[50] Broadband Differential 1.5-5 GHz LO Buffer Amplifier Based On SiGe BiCMOS Technology
Kokolov, A. A.
Sheyerman, F. I.
Babak, L. I.
2017 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) PROCEEDINGS, 2017,

← 1 2 3 4 5 →