Effect of Passivation Opening on Electromigration in Eutectic SnPb Solder Joints

被引：0
|
作者：
Shen, F. J. [1 ]
Chen, Chih [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
来源：
EPTC: 2008 10TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
10.1109/EPTC.2008.4763585
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effect of passivation opening on electromigration in eutectic SnPb solder joints is investigated in this study. Solder bumps were fabricated with a polyimide (PI) and without a PI layer. Both sets of solder joints were subjected to electromigration tests by 0.8A at 150 degrees C. Kelvin probes were employed to monitor the increase in bump resistance during electromigration. The bump failure is defined when the bump resistance increase to 100% of its initial value. It is found that the failure time is different for the two joints and the failure occurs in different locations for the two joints. 3D simulation on current density is performed to examine the difference in current distribution for the two joints. It is found that the current density distribution plays key roles in the failure location of electromigration.
引用
收藏
页码：1154 / 1159
页数：6
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