Study of electromigration in eutectic SnPb solder stripes using the edge displacement method

被引:4
|
作者
Chou, C. K. [1 ]
Hsu, Y. C. [1 ]
Chen, Chih [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan
关键词
electromigration (EM); flip-chip solder; packaging;
D O I
10.1007/s11664-006-0213-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60 degrees to 140 degrees C. The measured drift velocity was found to be 0.3 A/sec when the solder stripe was stressed under 4.9 x 104 A/cm(2) at 80 degrees C, and it increased as the current density or the temperature increased. The products of DZ* at 60 degrees C, 80 degrees C, 100 degrees C, 120 degrees C, and 140 degrees C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60-100 degrees C and 0.55 eV at the temperature range 100-140 degrees C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints.
引用
收藏
页码:1655 / 1659
页数:5
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