Study of electromigration in eutectic SnPb solder stripes using the edge displacement method

被引:0
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作者
C. K. Chou
Y. C. Hsu
Chih Chen
机构
[1] National Chiao Tung University,Department of Material Science and Engineering
来源
关键词
Electromigration (EM); flip-chip solder; packaging;
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摘要
Electromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60° to 140°C. The measured drift velocity was found to be 0.3 Å/sec when the solder stripe was stressed under 4.9×104 A/cm2 at 80°C, and it increased as the current density or the temperature increased. The products of DZ* at 60°C, 80°C, 100°C, 120°C, and 140°C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60–100°C and 0.55 eV at the temperature range 100–140°C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints.
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页码:1655 / 1659
页数:4
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