Organic Thin-Film Transistor from a Pentacene Photoprecursor

被引：31

作者：

Masumoto, Akane ^{[1
]}

Yamashita, Yuko ^{[2
]}

Go, Shintetsu ^{[3
]}

Kikuchi, Toshihiro ^{[3
]}

Yamada, Hiroko ^{[2
,4
]}

Okujima, Tetsuo ^{[2
]}

Ono, Noboru ^{[2
]}

Uno, Hidemitsu ^{[5
,6
]}

机构：

[1] Canon Inc, OD Dev Ctr, Tokyo 1468501, Japan

[2] Ehime Univ, Dept Chem, Fac Sci, Matsuyama, Ehime 7908577, Japan

[3] Canon Inc, Mat Technol Dev Ctr, Tokyo 1468501, Japan

[4] PRESTO JST, Kawaguchi, Saitama 3320012, Japan

[5] Ehime Univ, Integrated Ctr Sci, Matsuyama, Ehime 7908577, Japan

[6] CREST JST, Matsuyama, Ehime 7908577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 05期

关键词：

FIELD-EFFECT TRANSISTOR; SOLUBLE PENTACENE; HIGH-PERFORMANCE; PRECURSOR; MOBILITY; SEMICONDUCTORS; DERIVATIVES; CRYSTAL; DIELECTRICS; MORPHOLOGY;

D O I：

10.1143/JJAP.48.051505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic thin-film transistors were successfully fabricated by the spin-coating method using a photo-precursor of pentacene, 6,13-dihydro-6,13-ethanopentacene-15,16-dione. After spin coating the soluble precursor, irradiation with visible light gave a pentacene film. A good mobility of 0.34 cm(2) V(-1) s(-1) and a high on/off ratio of 2.0 x 10(6) were achieved by treatment of the insulator surface with methyl silsesquioxane and by deposition of pentacene from the precursor with visible light irradiation (>300 nm) and mild heat treatment (110-120 degrees C). In this case, small grains of pentacene crystals existed in the loosely ordered pentacene mesophase, in which pentacene molecules aligned vertically. Not only the grains of pentacene crystals but also the loosely packed pentacene phase played an important role in the field-effect transistor (FET) performance. (C) 2009 The Japan Society of Applied Physics

引用

页码：0515051 / 0515055

页数：5

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